时间：2024年12月31日（周二） 15:00-16:30

Time: 15:00-16:30, Tuesday, December 31, 2024

地点：西湖大学云谷校区E10-305

Venue: E10-305, Yungu Campus

主持人: 西湖大学工学院 师恩政博士

Host: Dr. Enzheng Shi, Assistant Professor, Westlake University

语言：中文

Language: Chinese

主讲嘉宾/Speaker：

Dr. Ran Cheng 程然

浙江大学集成电路学院

主讲人简介/Biography:

程然，浙江大学集成电路学院副教授/院长助理，本科和博士毕业于新加坡国立大学计算机与电气工程系，从事存算一体器件和芯片和低温高性能计算芯片等方面的研究工作。在纳米级器件工艺研发、铁电存算一体技术以及低温可靠性表征领域有着丰富的经验和突出的成果。她在领域内的顶会和旗舰期刊发表成果80余篇。获得过ECS年度青年撰稿人奖（全球1篇/年），工作曾被知名半导体网站Semiconductor Engineering作为亮点报道。她多次受邀为领域国际会议和龙头企业做大会报告和技术咨询，也受邀为半导体器件期刊撰写多个综述报告。目前担任IEEE多个器件会议的TPC Member。她在存算一体和低温芯片方面的工作获批多项重要纵向项目，包括国自然重点项目、面上项目、浙江省科技厅“尖兵”项目和浙江省自然科学基金委重大项目等。

讲座摘要/Abstract:

In this report, a novel 1FeFET-1RRAM(1FeFET1R) design for logic-in-memory (LiM) applications has been proposed and experimentally demonstrated. Emerging non-volatile storage devices – FeFET and RRAM, are integrated together for non-volatile logic operations and logic reconfiguration, respectively. Complete Boolean logic functions have been demonstrated with the 1FeFET1R unit and cascade circuits, which also exhibit excellent speed and reliability performance. Therefore, the demonstrated 1FeFET1R design is a promising LiM solution for its superiority in area efficiency, power consumption, process simplicity, speed, reliability and field reconfigurability.

讲座联系人/Contact:

朱云云

zhuyunyun@westlake.edu.cn