时间：2025年4月18日（周五） 10:00-11:30

Time: 10:00-11:30, Friday, April18, 2025

地点：西湖大学云谷校区E10-211

Venue: E10-211, Yungu Campus

主持人: 西湖大学工学院 陆启阳博士

Host: Dr. Qiyang Lu, Assistant Professor, Westlake University

语言：英文

Language: English

主讲嘉宾/Speaker：

Prof. Hongliang Zhang 张洪良

Professor

College of Chemistry and Chemical Engineering and College of Physical Science and Technology

Xiamen University

主讲人简介/Biography:

Hongliang Zhang is a professor at College of Chemistry and Chemical Engineering and College of Physical Science and Technology, Xiamen University. He earned his bachelor degree in optoelectronics from Shandong University in 2003, master degree in condensed matter physics from National University of Singapore in 2008, and PhD degree in inorganic chemistry from University of Oxford in 2011. He did a postdoc at Pacific Northwest National Laboratory from 2011 to 2014, and then worked as a Herchel Smith Fellow at University of Cambridge from 2014 to 2017. He then joined Xiamen University in 2017. His research focuses on the epitaxy of ultra-wide bandgap semiconductor thin films, doping and defect controlling, and optoelectronic devices. He has published over 200 papers in prestigious journals such as Nature Electronics, Nature Communications, Physical Review Letters, Journal of the American Chemical Society, etc. He holds 15 patents and has authored one book. He has led or participated in eight major research projects, including those under the National Key R&D Program of China, grants from the National Natural Science Foundation of China, and collaborative R&D projects with industry.

讲座摘要/Abstract:

Gallium oxide has gained significant attention due to its exceptional material properties, including an ultra-large bandgap of 4.9 eV, a high breakdown electric field of 8 MV/cm, and availability of large size bulk crystal grown by melt method. These merits enable Ga₂O₃ a promising material for high power electronics and solar blind UV optoelectronic applications. In this talk, I will give a brief overview on the ultra-wide bandgap semiconductors (the so-called 4^th generation semiconductors) and the current status of Ga₂O₃, then followed by research progress from our group on the Ga₂O₃ thin film epitaxy, doping and defect mechanisms, as well as solar-blind DUV photodetectors.

讲座联系人/Contact:

工学院朱云云

zhuyunyun@westlake.edu.cn